4.5v drive nch mosfet RMW130N03 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) high power package(psop8). 2) high-speed switching,low on-resistance. 3) low voltage drive(4.5v drive). ? application switching ? packaging specifications ? inner circuit package taping code tb basic ordering unit (pieces) 2500 RMW130N03 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 30 v gate-source voltage v gss ? 20 v continuous i d ? 13 a pulsed i dp ? 52 a continuous i s 2.5 a pulsed i sp 52 a power dissipation p d 3.0 w channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on 40mm 40mm cu board ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 41.7 ? c / w * mounted on 40mm 40mm cu board parameter type source current (body diode) drain current parameter *2 *1 *1 * (1) source (2) source (3) source (4) gate (5) drain (6) drain (7) drain (8) drain ? 1 esd protection diode ? 2 body diode ?2 ?1 (8) (7) (6) (5) (1) (2) (3) (4) psop8 5.0 6.0 0.5 0.5 5.0 0.4 1pin mark (1) (2) (3) (4) (8) (7) (6) (5) 0.22 0.9 0 ~ 0.1 1.27 1/6 2011.03 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RMW130N03 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss 30 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =30v, v gs =0v gate threshold voltage v gs (th) 1.0 - 2.5 v v ds =10v, i d =1ma - 9.0 12.6 i d =13a, v gs =10v - 12.6 17.7 i d =13a, v gs =4.5v forward transfer admittance l y fs l7 - - si d =13a, v ds =10v input capacitance c iss - 650 - pf v ds =15v output capacitance c oss - 310 - pf v gs =0v reverse transfer capacitance c rss - 85 - pf f=1mhz turn-on delay time t d(on) - 11 - ns i d =6a, v dd 15v rise time t r - 35 - ns v gs =10v turn-off delay time t d(off) - 30 - ns r l =2.5? fall time t f -8-nsr g =10 ? total gate charge q g - 12 - nc i d =13a, v dd 15v gate-source charge q gs - 2.7 - nc v gs =10v gate-drain charge q gd - 2.6 - nc *pulsed ? body diode characteristics (source-drain) (ta = 25 ? c) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =2.5a, v gs =0v *pulsed conditions conditions m ? parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * * * * * * * * * * * * 2/6 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RMW130N03 ? electrical characteristic curves (ta=25 ? c) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 0 0.2 0.4 0.6 0.8 1 v gs = 2.5v ta=25 c pulsed v gs = 10v v gs = 4.5v v gs = 4.0v v gs = 3.5v v gs = 3.0v fig.1 typical output characteristics( ) drain current : i d [a] drain - source voltage : v ds [v] 0 1 2 3 4 5 6 7 8 9 10 11 12 13 0 2 4 6 8 10 v gs = 2.5v v gs = 3.0v v gs = 10v v gs = 4.5v v gs = 4.0v v gs = 3.5v ta=25 c pulsed fig.2 typical output characteristics( ) drain - source voltage : v ds [v] drain current : i d [a] fig.3 typical transfer characteristics drain current : i d [a] gate - source voltage : v gs [v] fig.4 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] fig.5 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] fig.6 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 0.001 0.01 0.1 1 10 100 0 1 2 3 4 v ds = 10v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c 1 10 100 0.1 1 10 100 . ta=25 c pulsed v gs = 4.5v v gs = 10v 1 10 100 0.1 1 10 100 v gs = 10v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c 1 10 100 0.1 1 10 100 v gs = 4.5v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c 3/6 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RMW130N03 fig.7 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain - current : i d [a] fig.8 reverse drain current vs. sourse - drain voltage source current : is [a] source - drain voltage : v sd [v] 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 i d = 13a i d = 6.5a ta=25 c pulsed fig.9 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds (on)[m ? ] gate - source voltage : v gs [v] 1 10 100 1000 10000 0.01 0.1 1 10 100 t f t d(on) t d(off) ta=25 c v dd = 15v v gs =10v r g =10 pulsed t r fig.10 switching characteristics switching time : t [ns] drain - current : i d [a] 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 11 12 13 ta=25 c v dd = 15v i d = 13a r g =10 pulsed fig.11 dynamic input characteristics gate - source voltage : v gs [v] total gate charge : qg [nc] 10 100 1000 10000 0.01 0.1 1 10 100 c iss c rss ta=25 c f=1mhz v gs =0v c oss fig.12 typical capacitance vs. drain - source voltage drain - source voltage : v ds [v] capacitance : c [pf] 0.1 1 10 100 0.01 0.1 1 10 100 v ds = 10v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c 0.01 0.1 1 10 100 0 0.5 1 1.5 v gs =0v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c 4/6 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RMW130N03 0.01 0.1 1 10 100 1000 0.1 1 10 100 p w = 1ms dc operation operation in this area is limited by r ds(on) (v gs =10v) p w =100us p w =10ms ta = 25 c single pulse mounted on a copper board fig.13 maximum safe operating aera drain - source voltage : v ds [v] drain current : i d (a) 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 ta = 25 c single pulse : 1unit rth(ch - a)(t) = r(t) rth(ch - a) rth(ch - a) = 41.7 c /w fig.14 normalized transient thermal resistance vs. pulse width pulse width : pw(s) normarized transient thermal resistance : r (t) 5/6 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RMW130N03 ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. v gs r g v d s d.u.t. i d r l v dd 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform 6/6 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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